Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.017

Title:	Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs
Authors:	Mathew, S. Bera, L.K. Balasubramanian, N. Joo, M.S. Cho, B.J.
Keywords:	Charge trapping HfAlO High-k dielectrics Mobility
Issue Date:	Sep-2004
Citation:	Mathew, S., Bera, L.K., Balasubramanian, N., Joo, M.S., Cho, B.J. (2004-09). Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs. Thin Solid Films 462-463 (SPEC. ISS.) : 11-14. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.017
Abstract:	NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate. © 2004 Published by Elsevier B.V.
Source Title:	Thin Solid Films
URI:	http://scholarbank.nus.edu.sg/handle/10635/82034
ISSN:	00406090
DOI:	10.1016/j.tsf.2004.05.017
Appears in Collections:	Staff Publications

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