Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.017
Title: Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs
Authors: Mathew, S.
Bera, L.K.
Balasubramanian, N.
Joo, M.S. 
Cho, B.J. 
Keywords: Charge trapping
HfAlO
High-k dielectrics
Mobility
Issue Date: Sep-2004
Citation: Mathew, S., Bera, L.K., Balasubramanian, N., Joo, M.S., Cho, B.J. (2004-09). Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs. Thin Solid Films 462-463 (SPEC. ISS.) : 11-14. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.017
Abstract: NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate. © 2004 Published by Elsevier B.V.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/82034
ISSN: 00406090
DOI: 10.1016/j.tsf.2004.05.017
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