Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3276556

Title:	Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex
Authors:	Liu, G. Zhuang, X. Chen, Y. Zhang, B. Zhu, J. Zhu, C.-X. Neoh, K.-G. Kang, E.-T.
Issue Date:	2009
Citation:	Liu, G., Zhuang, X., Chen, Y., Zhang, B., Zhu, J., Zhu, C.-X., Neoh, K.-G., Kang, E.-T. (2009). Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex. Applied Physics Letters 95 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3276556
Abstract:	A solution-processable and electroactive complex of poly(N -vinylcarbazole)-derivatized graphene oxide (GO-PVK) was prepared via amidation of end-functionalized PVK, from reversible addition fragmentation chain transfer polymerization, with tolylene-2,5-diisocyanate-functionalized graphene oxide. The Al/GO-PVK/ITO device exhibits bistable electrical conductivity switching and nonvolatile rewritable memory effects. Both the OFF and ON states of the memory device are stable under a constant voltage stress of -1 V for up to 3 h, or under a pulse voltage stress of -1 V for up to 108 read cycles, with an ON/OFF state current ratio in excess of 103. © 2009 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82012
ISSN:	00036951
DOI:	10.1063/1.3276556
Appears in Collections:	Staff Publications

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