Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4813882

Title:	Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy
Authors:	Owen, M.H.S. Guo, C. Chen, S.-H. Wan, C.-T. Cheng, C.-C. Wu, C.-H. Ko, C.-H. Wann, C.H. Ivana Zhang, Z. Pan, J.S. Yeo, Y.-C.
Issue Date:	15-Jul-2013
Citation:	Owen, M.H.S., Guo, C., Chen, S.-H., Wan, C.-T., Cheng, C.-C., Wu, C.-H., Ko, C.-H., Wann, C.H., Ivana, Zhang, Z., Pan, J.S., Yeo, Y.-C. (2013-07-15). Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy. Applied Physics Letters 103 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4813882
Abstract:	Lattice-matched In0.48Al0.52P was grown on a p-type Ge(100) substrate by metal-organic chemical vapor deposition, and the band-alignment of In0.48Al0.52P on Ge substrate was obtained by high resolution x-ray photoelectron spectroscopy. The valence band offset for the InAlP/Ge(100) interface was found to be 0.86 eV, with a corresponding conduction band offset of 0.84 eV. From the values obtained, the energy band diagram of InAlP/Ge interface is found to be of type I. © 2013 AIP Publishing LLC.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82001
ISSN:	00036951
DOI:	10.1063/1.4813882
Appears in Collections:	Staff Publications

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