Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4813882
Title: Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy
Authors: Owen, M.H.S.
Guo, C.
Chen, S.-H.
Wan, C.-T.
Cheng, C.-C.
Wu, C.-H.
Ko, C.-H.
Wann, C.H.
Ivana
Zhang, Z.
Pan, J.S.
Yeo, Y.-C. 
Issue Date: 15-Jul-2013
Citation: Owen, M.H.S., Guo, C., Chen, S.-H., Wan, C.-T., Cheng, C.-C., Wu, C.-H., Ko, C.-H., Wann, C.H., Ivana, Zhang, Z., Pan, J.S., Yeo, Y.-C. (2013-07-15). Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy. Applied Physics Letters 103 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4813882
Abstract: Lattice-matched In0.48Al0.52P was grown on a p-type Ge(100) substrate by metal-organic chemical vapor deposition, and the band-alignment of In0.48Al0.52P on Ge substrate was obtained by high resolution x-ray photoelectron spectroscopy. The valence band offset for the InAlP/Ge(100) interface was found to be 0.86 eV, with a corresponding conduction band offset of 0.84 eV. From the values obtained, the energy band diagram of InAlP/Ge interface is found to be of type I. © 2013 AIP Publishing LLC.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82001
ISSN: 00036951
DOI: 10.1063/1.4813882
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