Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1938849
Title: Annealing-induced group v intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopy
Authors: Tripathy, S.
Chia, C.K.
Dong, J.R.
Chua, S.J. 
Issue Date: 2005
Citation: Tripathy, S., Chia, C.K., Dong, J.R., Chua, S.J. (2005). Annealing-induced group v intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopy. Electrochemical and Solid-State Letters 8 (8) : G194-G197. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1938849
Abstract: Post-growth intermixing by rapid thermal annealing in self-assembled InAs/InP quantum dot (QD) structures with and without SiO 2 capping has been investigated. Room-temperature photoluminescence spectra measured from the intermixed QD structures show substantial blue shift accompanied by an increase in the PL intensity. Such group V intermixing is further probed by micro-Raman scattering technique. Apart from InAs and InP related longitudinal optical and transverse optical phonon peaks, Raman spectra show the appearance of InAs- and InP-like phonon peaks from InAsP-like alloy formed at the QD interfaces. These alloy modes show substantial peak shift with respect to annealing temperature and clearly indicates As/P exchange at the QD interfaces. © 2005 The Electrochemical Society. All rights reserved.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81977
ISSN: 10990062
DOI: 10.1149/1.1938849
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