Annealing-induced group v intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopy

Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1938849

Title:	Annealing-induced group v intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopy
Authors:	Tripathy, S. Chia, C.K. Dong, J.R. Chua, S.J.
Issue Date:	2005
Citation:	Tripathy, S., Chia, C.K., Dong, J.R., Chua, S.J. (2005). Annealing-induced group v intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopy. Electrochemical and Solid-State Letters 8 (8) : G194-G197. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1938849
Abstract:	Post-growth intermixing by rapid thermal annealing in self-assembled InAs/InP quantum dot (QD) structures with and without SiO 2 capping has been investigated. Room-temperature photoluminescence spectra measured from the intermixed QD structures show substantial blue shift accompanied by an increase in the PL intensity. Such group V intermixing is further probed by micro-Raman scattering technique. Apart from InAs and InP related longitudinal optical and transverse optical phonon peaks, Raman spectra show the appearance of InAs- and InP-like phonon peaks from InAsP-like alloy formed at the QD interfaces. These alloy modes show substantial peak shift with respect to annealing temperature and clearly indicates As/P exchange at the QD interfaces. © 2005 The Electrochemical Society. All rights reserved.
Source Title:	Electrochemical and Solid-State Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/81977
ISSN:	10990062
DOI:	10.1149/1.1938849
Appears in Collections:	Staff Publications

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