A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2011.2181971

Title:	A self-rectifying HfO x-based unipolar RRAM with Nisi electrode
Authors:	Tran, X.A. Zhu, W.G. Gao, B. Kang, J.F. Liu, W.J. Fang, Z. Wang, Z.R. Yeo, Y.C. Nguyen, B.Y. Li, M.F. Yu, H.Y.
Keywords:	Resistive random access memory (RAM) (RRAM) resistive switching self-rectify unipolar
Issue Date:	Apr-2012
Citation:	Tran, X.A., Zhu, W.G., Gao, B., Kang, J.F., Liu, W.J., Fang, Z., Wang, Z.R., Yeo, Y.C., Nguyen, B.Y., Li, M.F., Yu, H.Y. (2012-04). A self-rectifying HfO x-based unipolar RRAM with Nisi electrode. IEEE Electron Device Letters 33 (4) : 585-587. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2181971
Abstract:	In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfO xTiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/81910
ISSN:	07413106
DOI:	10.1109/LED.2011.2181971
Appears in Collections:	Staff Publications

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