Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2011.2181971
Title: A self-rectifying HfO x-based unipolar RRAM with Nisi electrode
Authors: Tran, X.A.
Zhu, W.G.
Gao, B.
Kang, J.F.
Liu, W.J.
Fang, Z.
Wang, Z.R.
Yeo, Y.C. 
Nguyen, B.Y.
Li, M.F.
Yu, H.Y.
Keywords: Resistive random access memory (RAM) (RRAM)
resistive switching
self-rectify
unipolar
Issue Date: Apr-2012
Citation: Tran, X.A., Zhu, W.G., Gao, B., Kang, J.F., Liu, W.J., Fang, Z., Wang, Z.R., Yeo, Y.C., Nguyen, B.Y., Li, M.F., Yu, H.Y. (2012-04). A self-rectifying HfO x-based unipolar RRAM with Nisi electrode. IEEE Electron Device Letters 33 (4) : 585-587. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2181971
Abstract: In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfO xTiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81910
ISSN: 07413106
DOI: 10.1109/LED.2011.2181971
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