A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2012.2210855

Title:	A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
Authors:	Tran, X.A. Zhu, W. Liu, W.J. Yeo, Y.C. Nguyen, B.Y. Yu, H.Y.
Keywords:	Bipolar resistive random access memory (RRAM) resistive switching (RS) self-rectifying
Issue Date:	2012
Citation:	Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y. (2012). A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture. IEEE Electron Device Letters 33 (10) : 1402-1404. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2210855
Abstract:	In this letter, a bipolar resistive switching RAM based on Ni/AlOy/\hboxn+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state ( > 700 at 0.2 V), a high on/off resistance ratio (> \hbox103), a good retention characteristic (> \hbox104\ \hboxs at 100 \circC ), and a wide readout margin for cross-bar architecture (number of word line N > \hbox2 5 for worst case condition). © 2012 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/81909
ISSN:	07413106
DOI:	10.1109/LED.2012.2210855
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check