Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.832535
Title: A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate
Authors: Ren, C.
Yu, H.Y. 
Kang, J.F.
Wang, X.P.
Ma, H.H.H. 
Yeo, Y.-C. 
Chan, D.S.H. 
Li, M.-F. 
Kwong, D.-L.
Issue Date: Aug-2004
Citation: Ren, C., Yu, H.Y., Kang, J.F., Wang, X.P., Ma, H.H.H., Yeo, Y.-C., Chan, D.S.H., Li, M.-F., Kwong, D.-L. (2004-08). A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate. IEEE Electron Device Letters 25 (8) : 580-582. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.832535
Abstract: A novel replacement gate process employing a HfN dummy gate and sub-1-nm equivalent oxide thickness (EOT) HfO2 gate dielectric is demonstrated. The excellent thermal stability of the HfN-HfO2 gate stack enables its use in high temperature CMOS processes. The replacement of HfN with other metal gate materials with work functions adequate for n- and pMOS is facilitated by a high etch selectivity of HfN with respect to HfO2, without any degradation to the EOT, gate leakage, or time-dependent dielectric breakdown characteristics of HfO2. By replacing the HfN dummy gate with Ta and Ni in nMOS and pMOS devices, respectively, a work function difference of ∼0.8 eV between nMOS and pMOS gate electrodes is achieved. This process could be applicable to sub-50-nm CMOS technology employing ultrathin HfO2 gate dielectric. © 2004 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81863
ISSN: 07413106
DOI: 10.1109/LED.2004.832535
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