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|Title:||Simulation of recessed channel SOI mosfet|
|Authors:||Samudra, G.S. |
|Citation:||Samudra, G.S.,Yip, A. (1997). Simulation of recessed channel SOI mosfet. International Symposium on IC Technology, Systems and Applications 7 : 145-148. ScholarBank@NUS Repository.|
|Abstract:||Recessed Channel Silicon-on-insulator (RCSOI) MOSFETs were investigated using a combined scheme using 2-D process simulator, TSUPREM-4 and 2-D device simulator, MEDICI. RCSOI design is optimised for CMOS ULSI. The figures of merit emphasised are Vthadjustment, Vth roll-off, subthreshold characteristics, suppression of parasitic effects like Rsd current drivability and hot-carrier induced degradation. An optimal RCSOI structure is recommended based on the analysis of the simulation results.|
|Source Title:||International Symposium on IC Technology, Systems and Applications|
|Appears in Collections:||Staff Publications|
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