Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81748
Title: Simulation of recessed channel SOI mosfet
Authors: Samudra, G.S. 
Yip, A.
Issue Date: 1997
Citation: Samudra, G.S.,Yip, A. (1997). Simulation of recessed channel SOI mosfet. International Symposium on IC Technology, Systems and Applications 7 : 145-148. ScholarBank@NUS Repository.
Abstract: Recessed Channel Silicon-on-insulator (RCSOI) MOSFETs were investigated using a combined scheme using 2-D process simulator, TSUPREM-4 and 2-D device simulator, MEDICI. RCSOI design is optimised for CMOS ULSI. The figures of merit emphasised are Vthadjustment, Vth roll-off, subthreshold characteristics, suppression of parasitic effects like Rsd current drivability and hot-carrier induced degradation. An optimal RCSOI structure is recommended based on the analysis of the simulation results.
Source Title: International Symposium on IC Technology, Systems and Applications
URI: http://scholarbank.nus.edu.sg/handle/10635/81748
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