Dependence of the composition of InAs1-xSbx on the mole fraction of In in the melt using LPE

Abstract

The liquid phase epitaxial technique was used to grow InAsSb on the Gasb substrate using Sb as a solvent. This study departs from the traditional approach where the mole fraction of the group III component (In) was kept constant while varying the ratio between the group V components (As, Sb) to change the value of "x" in InAs1-xSbx. In our study we were able to achieve a variation in "x" by keeping the ratio of group V components (As and Sb) constant, while varying the In mole fraction in the melt. With this approach a wider range of temperature can be used for the growth, and layers with both positive and negative lattice mismatch can be obtained without any indication of substrate erosion. To the best of the authors knowledge this is the first study of this kind.