Please use this identifier to cite or link to this item:
Title: X-ray photoelectron spectroscopy study of rapid thermal annealed silicon-silicon oxide systems
Authors: Choi, W.K. 
Poon, F.W.
Loh, F.C. 
Tan, K.L. 
Issue Date: 1-Jun-1997
Source: Choi, W.K.,Poon, F.W.,Loh, F.C.,Tan, K.L. (1997-06-01). X-ray photoelectron spectroscopy study of rapid thermal annealed silicon-silicon oxide systems. Journal of Applied Physics 81 (11) : 7386-7391. ScholarBank@NUS Repository.
Abstract: We present the results of an investigation on the effects of rapid thermal annealing (RTA) temperature (Tp) and time (tp) on the structural and electrical properties of silicon-silicon oxide systems. X-ray photoelectron spectroscopy (XPS) was used to provide information on the oxide composition of the annealed oxide sample. We found that a higher Tp and/or a longer tp will increase the percentage of SiO2 in the annealed oxide layer and thus improve the oxide quality. We also discovered that increasing Tp and/or tp will result in a thicker oxide layer. The suboxide density calculation based on the XPS results indicates that the Si-SiO2 interface of our RTA samples is not abrupt. We have used the conclusions obtained from the XPS study to provide satisfactory explanations for the different current versus voltage characteristics exhibited by our tunnel diodes. © 1997 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Mar 8, 2018

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.