Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.47.13868
Title: Velocity-field characteristics of selectively doped GaAs/AlxGa1-xAs quantum-well heterostructures
Authors: Tan, L.S. 
Chua, S.J. 
Arora, V.K. 
Issue Date: 1993
Citation: Tan, L.S., Chua, S.J., Arora, V.K. (1993). Velocity-field characteristics of selectively doped GaAs/AlxGa1-xAs quantum-well heterostructures. Physical Review B 47 (20) : 13868-13871. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.47.13868
Abstract: Recent experimental observations indicating poor correlation between the saturation velocity and Ohmic mobility lead us to propose a theory for a velocity-limiting mechanism in quantum-well heterostructures. The theory is based on the distribution function which takes into account the electron-drift anisotropy introduced by the high electric field for a degenerately doped quantum well. The drift velocity is shown to be limited by the Fermi velocity; a result which indicates that the saturation velocity is independent of the low-field mobility which is strongly controlled by momentum-randomizing scattering events. The dominance of optical-phonon emission at high electric field lowers the saturation velocity below the Fermi velocity. Excellent agreement is obtained between the theoretical and experimental results on the velocity-field characteristics of GaAs/AlxGa1-xAs quantum-well heterostructures. © 1993 The American Physical Society.
Source Title: Physical Review B
URI: http://scholarbank.nus.edu.sg/handle/10635/81347
ISSN: 01631829
DOI: 10.1103/PhysRevB.47.13868
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