Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.114807
Title: Two types of local oxide/substrate defects in very thin silicon dioxide films on silicon
Authors: Lau, W.S. 
Sane, V. 
Pey, K.S.
Cronquist, B.
Issue Date: 1995
Source: Lau, W.S., Sane, V., Pey, K.S., Cronquist, B. (1995). Two types of local oxide/substrate defects in very thin silicon dioxide films on silicon. Applied Physics Letters 67 : 2854-. ScholarBank@NUS Repository. https://doi.org/10.1063/1.114807
Abstract: The local oxide defects observed in thin silicon dioxide films on p-type Si were studied with the electron beam induced current/tunneling current microscopy technique. Excluding pinholes, all the local defects observed are local oxide/substrate defects, i.e., local oxide defects propagated from defects in the Si substrate into the SiO2. It was observed that local oxide/substrate defects can be further differentiated into two different types by studying the transition from the true oxide electron beam induced current contrast to the tunneling current microscopy contrast.© 1995 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81314
ISSN: 00036951
DOI: 10.1063/1.114807
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

15
checked on Feb 20, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.