Please use this identifier to cite or link to this item:
|Title:||Two types of local oxide/substrate defects in very thin silicon dioxide films on silicon|
|Authors:||Lau, W.S. |
|Citation:||Lau, W.S., Sane, V., Pey, K.S., Cronquist, B. (1995). Two types of local oxide/substrate defects in very thin silicon dioxide films on silicon. Applied Physics Letters 67 : 2854-. ScholarBank@NUS Repository. https://doi.org/10.1063/1.114807|
|Abstract:||The local oxide defects observed in thin silicon dioxide films on p-type Si were studied with the electron beam induced current/tunneling current microscopy technique. Excluding pinholes, all the local defects observed are local oxide/substrate defects, i.e., local oxide defects propagated from defects in the Si substrate into the SiO2. It was observed that local oxide/substrate defects can be further differentiated into two different types by studying the transition from the true oxide electron beam induced current contrast to the tunneling current microscopy contrast.© 1995 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 25, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.