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|Title:||True oxide electron beam induced current for low-voltage imaging of local defects in very thin silicon dioxide films|
|Authors:||Lau, W.S. |
|Citation:||Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Cronquist, B. (1993). True oxide electron beam induced current for low-voltage imaging of local defects in very thin silicon dioxide films. Applied Physics Letters 63 (16) : 2240-2242. ScholarBank@NUS Repository. https://doi.org/10.1063/1.110539|
|Abstract:||A new low-voltage contrast mechanism due to electron hole pairs generated in the oxide by an electron beam was observed at an electric field lower than 3.5 MV/cm in addition to the tunneling current microscopy (TCM) contrast mechanism at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism. Good contrast can be obtained at an electric field as low as 2.4 MV/cm, which is two to three times smaller than that needed for TCM contrast. Potential applications include large area imaging and quantitative imaging of oxide defects.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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