True oxide electron beam induced current for low-voltage imaging of local defects in very thin silicon dioxide films

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.110539

Title:	True oxide electron beam induced current for low-voltage imaging of local defects in very thin silicon dioxide films
Authors:	Lau, W.S. Chan, D.S.H. Phang, J.C.H. Chow, K.W. Pey, K.S. Lim, Y.P. Cronquist, B.
Issue Date:	1993
Citation:	Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Cronquist, B. (1993). True oxide electron beam induced current for low-voltage imaging of local defects in very thin silicon dioxide films. Applied Physics Letters 63 (16) : 2240-2242. ScholarBank@NUS Repository. https://doi.org/10.1063/1.110539
Abstract:	A new low-voltage contrast mechanism due to electron hole pairs generated in the oxide by an electron beam was observed at an electric field lower than 3.5 MV/cm in addition to the tunneling current microscopy (TCM) contrast mechanism at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism. Good contrast can be obtained at an electric field as low as 2.4 MV/cm, which is two to three times smaller than that needed for TCM contrast. Potential applications include large area imaging and quantitative imaging of oxide defects.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/81308
ISSN:	00036951
DOI:	10.1063/1.110539
Appears in Collections:	Staff Publications

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