Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.110539
Title: | True oxide electron beam induced current for low-voltage imaging of local defects in very thin silicon dioxide films |
Authors: | Lau, W.S. Chan, D.S.H. Phang, J.C.H. Chow, K.W. Pey, K.S. Lim, Y.P. Cronquist, B. |
Issue Date: | 1993 |
Source: | Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Cronquist, B. (1993). True oxide electron beam induced current for low-voltage imaging of local defects in very thin silicon dioxide films. Applied Physics Letters 63 (16) : 2240-2242. ScholarBank@NUS Repository. https://doi.org/10.1063/1.110539 |
Abstract: | A new low-voltage contrast mechanism due to electron hole pairs generated in the oxide by an electron beam was observed at an electric field lower than 3.5 MV/cm in addition to the tunneling current microscopy (TCM) contrast mechanism at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism. Good contrast can be obtained at an electric field as low as 2.4 MV/cm, which is two to three times smaller than that needed for TCM contrast. Potential applications include large area imaging and quantitative imaging of oxide defects. |
Source Title: | Applied Physics Letters |
URI: | http://scholarbank.nus.edu.sg/handle/10635/81308 |
ISSN: | 00036951 |
DOI: | 10.1063/1.110539 |
Appears in Collections: | Staff Publications |
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