Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81220
Title: Strong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped Alx-Ga1-xAs/InyGa1-yAs/GaAs quantum well
Authors: Xu, S.J. 
Chua, S.J. 
Tang, X.H.
Zhang, X.H. 
Issue Date: 15-Dec-1996
Source: Xu, S.J.,Chua, S.J.,Tang, X.H.,Zhang, X.H. (1996-12-15). Strong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped Alx-Ga1-xAs/InyGa1-yAs/GaAs quantum well. Physical Review B - Condensed Matter and Materials Physics 54 (24) : 17701-17704. ScholarBank@NUS Repository.
Abstract: We have investigated photoluminescence and photoluminescence excitation spectra from a one-side modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs single quantum well under a near-resonance condition between the N=2 subband and the Fermi level of the two-dimensional electron gas. Under such conditions, strong interaction between electrons at the Fermi edge and the exciton related to the N=2 subband can be observed. The Fermi-edge singularity (FES) is enhanced first, and then the FES and the N=2 exciton repel each other. Finally, the N=2 exciton is screened by excess electrons with increased excitation power. With an increase in temperature, the FES rapidly quenches, and the intensity of the N=2 exciton transition increases accompanied by a blueshift of its peak position.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/81220
ISSN: 01631829
Appears in Collections:Staff Publications

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