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|Title:||Strong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped Alx-Ga1-xAs/InyGa1-yAs/GaAs quantum well|
|Authors:||Xu, S.J. |
|Citation:||Xu, S.J.,Chua, S.J.,Tang, X.H.,Zhang, X.H. (1996-12-15). Strong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped Alx-Ga1-xAs/InyGa1-yAs/GaAs quantum well. Physical Review B - Condensed Matter and Materials Physics 54 (24) : 17701-17704. ScholarBank@NUS Repository.|
|Abstract:||We have investigated photoluminescence and photoluminescence excitation spectra from a one-side modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs single quantum well under a near-resonance condition between the N=2 subband and the Fermi level of the two-dimensional electron gas. Under such conditions, strong interaction between electrons at the Fermi edge and the exciton related to the N=2 subband can be observed. The Fermi-edge singularity (FES) is enhanced first, and then the FES and the N=2 exciton repel each other. Finally, the N=2 exciton is screened by excess electrons with increased excitation power. With an increase in temperature, the FES rapidly quenches, and the intensity of the N=2 exciton transition increases accompanied by a blueshift of its peak position.|
|Source Title:||Physical Review B - Condensed Matter and Materials Physics|
|Appears in Collections:||Staff Publications|
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