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| Title: | Plasma-induced damage to n-type GaN | Authors: | Choi, H.W. Chua, S.J. Raman, A. Pan, J.S. Wee, A.T.S. |
Issue Date: | 18-Sep-2000 | Citation: | Choi, H.W.,Chua, S.J.,Raman, A.,Pan, J.S.,Wee, A.T.S. (2000-09-18). Plasma-induced damage to n-type GaN. Applied Physics Letters 77 (12) : 1795-1797. ScholarBank@NUS Repository. | Abstract: | The effects of plasma etching on 1/f noise and photoluminescence (PL) characteristics of n-GaN have been investigated. A reduction of 1/f noise was observed after plasma exposure, a result of enhanced passivation of the reactive surface. This is attributed to the removal of carbon and the creation of a Ga-rich surface by the etching process. Nevertheless, the formation of nonradiative recombination centers impaired the PL intensity. Reconstruction of a stoichiometric surface was achieved by annealing. This induced the incorporation of carbon into GaN, deteriorating the PL performance further, but it could be restored by a chemical treatment of 10:1 HF:H2O. © 2000 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/80992 | ISSN: | 00036951 |
| Appears in Collections: | Staff Publications |
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