Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1391143
Title: Photoresist patterning and ion implantation degradation effects on flash memory device yield
Authors: Cha, C.L.
Ngo, Q.
Chor, E.F. 
See, A.K.
Lee, T.J.
Issue Date: Jul-2000
Source: Cha, C.L.,Ngo, Q.,Chor, E.F.,See, A.K.,Lee, T.J. (2000-07). Photoresist patterning and ion implantation degradation effects on flash memory device yield. Electrochemical and Solid-State Letters 3 (7) : 340-342. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1391143
Abstract: The undesired effects of photoresist patterning and ion implantation toward achieving optimum yields for flash electrically erasable-programmable read-only memory (E 2PROM) devices are investigated. The conventional utilization of a blanket resist with small windows open at the source area of each cell for the conduction of an additional dopant implantation saw a much lower yield approximately 45% for the completed devices when compared to those using isolated resist cell windows for the same implant step approximately 70%. In addition, the former also displays poorer data retention capability owing to degraded tunneling dielectric quality, i.e., the device data retention loss for blanket resist patterning scheme is approximately 30% lower than what is registered in the improved scheme. The substantial improvement in both device yield and data retention capability for the latter arises from the reduction in the magnitude of surging current, which is made up by the dopant ionized charges, down the substrate via the open windows.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80980
ISSN: 10990062
DOI: 10.1149/1.1391143
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

28
checked on Feb 17, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.