Please use this identifier to cite or link to this item:
|Title:||Photoreflectance study of Si-doped GaN grown by metal-organic chemical vapor deposition|
|Authors:||Zhang, X. |
|Citation:||Zhang, X., Chua, S.-J., Liu, W., Chong, K.-B. (1998). Photoreflectance study of Si-doped GaN grown by metal-organic chemical vapor deposition. Applied Physics Letters 72 (15) : 1890-1892. ScholarBank@NUS Repository. https://doi.org/10.1063/1.121217|
|Abstract:||Si-doped n-GaN films grown by metal-organic chemical vapor deposition were studied by photoreflectance (PR) spectroscopy. Based on the intense optical transitions observed in the room-temperature PR spectra, the energy positions of the near-band-edge transition for n-GaN samples with different Si-doping levels were determined through theoretical curve fitting under the weak-field approximation. Furthermore, based on the observed dependence of the redshift in the near-band-edge transition energy with the carrier concentration and the approach using the many-body theory, the band-gap renormalization coefficient for GaN was derived to be (2.4±0.5)×10-8 eVcm. This value was found to be nearly 35% larger than that for GaAs.© 1998 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 18, 2018
WEB OF SCIENCETM
checked on Jul 17, 2018
checked on Jun 15, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.