Photoreflectance study of Si-doped GaN grown by metal-organic chemical vapor deposition

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.121217

Title:	Photoreflectance study of Si-doped GaN grown by metal-organic chemical vapor deposition
Authors:	Zhang, X. Chua, S.-J. Liu, W. Chong, K.-B.
Issue Date:	1998
Citation:	Zhang, X., Chua, S.-J., Liu, W., Chong, K.-B. (1998). Photoreflectance study of Si-doped GaN grown by metal-organic chemical vapor deposition. Applied Physics Letters 72 (15) : 1890-1892. ScholarBank@NUS Repository. https://doi.org/10.1063/1.121217
Abstract:	Si-doped n-GaN films grown by metal-organic chemical vapor deposition were studied by photoreflectance (PR) spectroscopy. Based on the intense optical transitions observed in the room-temperature PR spectra, the energy positions of the near-band-edge transition for n-GaN samples with different Si-doping levels were determined through theoretical curve fitting under the weak-field approximation. Furthermore, based on the observed dependence of the redshift in the near-band-edge transition energy with the carrier concentration and the approach using the many-body theory, the band-gap renormalization coefficient for GaN was derived to be (2.4±0.5)×10-8 eVcm. This value was found to be nearly 35% larger than that for GaAs.© 1998 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/80978
ISSN:	00036951
DOI:	10.1063/1.121217
Appears in Collections:	Staff Publications

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