Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80921
Title: Optoelectronic material analysis and device failure analysis using SEM cathodoluminescence
Authors: Pey, K.L. 
Chim, W.K. 
Phang, J.C.H. 
Chan, D.S.H. 
Issue Date: Jul-1994
Citation: Pey, K.L.,Chim, W.K.,Phang, J.C.H.,Chan, D.S.H. (1994-07). Optoelectronic material analysis and device failure analysis using SEM cathodoluminescence. Microelectronics Reliability 34 (7) : 1193-1202. ScholarBank@NUS Repository.
Abstract: This paper reports on a portable Cathodoluminescence (CL) system which was developed and its applications to optoelectronic material analysis and device failure analysis. The portable CL detector was made from a solid-state photodiode which was mounted onto a specimen stage adaptor. Its portability allows it to be retrofitted to practically any standard scanning electron microscope (SEM) chamber stage without requiring any modifications to the SEM. The CL detector system was used to investigate non-radiative material defects in light emitting diodes (LEDs). Panchromatic CL micrographs of a degraded GaAs0.72P0.28 LED and a AlGaAs epilayer grown by molecular beam epitaxy (MBE) containing various material defects are presented. A case study on the application of the SEM CL mode to the failure analysis of extra junctions in a LED device is also presented. The CL micrographs indicated the presence of an anomalous p-n-p-n structure which was verified by the current-voltage (I-V) characteristic. © 1994.
Source Title: Microelectronics Reliability
URI: http://scholarbank.nus.edu.sg/handle/10635/80921
ISSN: 00262714
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

38
checked on Jul 20, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.