Please use this identifier to cite or link to this item: https://doi.org/10.1016/0038-1098(96)00115-9
Title: Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser
Authors: Fan, W.J.
Li, M.F. 
Chong, T.C. 
Xia, J.B.
Keywords: A. quantum wells
A. semiconductors
D. electronic band structure
Issue Date: May-1996
Citation: Fan, W.J., Li, M.F., Chong, T.C., Xia, J.B. (1996-05). Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser. Solid State Communications 98 (8) : 737-740. ScholarBank@NUS Repository. https://doi.org/10.1016/0038-1098(96)00115-9
Abstract: Based on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained by a 6×6 Hamiltonian (including heavy hole, light hole and spin-orbit splitting band), optical gain and radiative current density are calculated for the strained quantum well laser structures. The compressive strain in the GaN well region strongly depresses the TM mode optical gain and enhances the TE mode optical gain.
Source Title: Solid State Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/80901
ISSN: 00381098
DOI: 10.1016/0038-1098(96)00115-9
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