Please use this identifier to cite or link to this item:
|Title:||Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser|
|Keywords:||A. quantum wells|
D. electronic band structure
|Citation:||Fan, W.J., Li, M.F., Chong, T.C., Xia, J.B. (1996-05). Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser. Solid State Communications 98 (8) : 737-740. ScholarBank@NUS Repository. https://doi.org/10.1016/0038-1098(96)00115-9|
|Abstract:||Based on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained by a 6×6 Hamiltonian (including heavy hole, light hole and spin-orbit splitting band), optical gain and radiative current density are calculated for the strained quantum well laser structures. The compressive strain in the GaN well region strongly depresses the TM mode optical gain and enhances the TE mode optical gain.|
|Source Title:||Solid State Communications|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 13, 2018
WEB OF SCIENCETM
checked on Nov 5, 2018
checked on Oct 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.