Negative bias temperature instability on plasma-nitrided silicon dioxide film

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80781

Title:	Negative bias temperature instability on plasma-nitrided silicon dioxide film
Authors:	Ang, C.-H. Lek, C.-M. Tan, S.-S. Cho, B.-J. Chen, T. Lin, W. Zhen, J.-G.
Keywords:	Interface trap MOS Negative-bias-temperature-instability Thin oxide
Issue Date:	15-Mar-2002
Citation:	Ang, C.-H.,Lek, C.-M.,Tan, S.-S.,Cho, B.-J.,Chen, T.,Lin, W.,Zhen, J.-G. (2002-03-15). Negative bias temperature instability on plasma-nitrided silicon dioxide film. Japanese Journal of Applied Physics, Part 2: Letters 41 (3 B) : L314-L316. ScholarBank@NUS Repository.
Abstract:	The behavior of negative-bias-temperature-instability (NBTI) on ultra-thin plasma-nitrided silicon dioxide films (1.8 and 2.6 nm) has been investigated and compared with conventional thermal nitridation. Plasma-nitrided oxides shows more resistance to NBTI, as compared to thermal-nitrided oxides. This is attributed to the fact that plasma nitridation incorporates the nitrogen at the top oxide surface, thus mitigating the undesirable nitrogen-enhanced NBTI effect. Additionally, the degradation mechanism of NBTI is found to be insensitive to the nitridation process, nitrogen concentration and boron penetration.
Source Title:	Japanese Journal of Applied Physics, Part 2: Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/80781
ISSN:	00214922
Appears in Collections:	Staff Publications

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