Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.669738
Title: Monitoring of TiSi 2 formation on narrow polycrystalline silicon lines using raman spectroscopy
Authors: Lim, E.H.
Karunasiri, G. 
Chua, S.J. 
Wong, H.
Pey, K.L.
Lee, K.H.
Issue Date: May-1998
Source: Lim, E.H., Karunasiri, G., Chua, S.J., Wong, H., Pey, K.L., Lee, K.H. (1998-05). Monitoring of TiSi 2 formation on narrow polycrystalline silicon lines using raman spectroscopy. IEEE Electron Device Letters 19 (5) : 171-173. ScholarBank@NUS Repository. https://doi.org/10.1109/55.669738
Abstract: Micro-Raman spectroscopy is used to monitor titanium silicide (TiSi 2) formation on narrow undoped polycrystalline silicon lines. Line widths varying from 1.0 μm down to 0.35 μm, with silicidation by rapid thermal anneal (RTA) temperature ranging between 780 °C and 1020 °C were analyzed. Phase changes between C49 and C54-Tisi 2 phases were clearly observed. Results demonstrate that analysis of the C54-TiSi 2 Raman peak intensity allowed fast and nondestructive estimation of the process window for low resistivity C54-TiSi 2 formation. Comparison with sheet resistivity measurements showed that micro-Reman scattering provides a complimentary means to electrical analysis for the study of Tisi 2 formation.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80752
ISSN: 07413106
DOI: 10.1109/55.669738
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