Please use this identifier to cite or link to this item:
|Title:||Monitoring of TiSi 2 formation on narrow polycrystalline silicon lines using raman spectroscopy|
|Citation:||Lim, E.H., Karunasiri, G., Chua, S.J., Wong, H., Pey, K.L., Lee, K.H. (1998-05). Monitoring of TiSi 2 formation on narrow polycrystalline silicon lines using raman spectroscopy. IEEE Electron Device Letters 19 (5) : 171-173. ScholarBank@NUS Repository. https://doi.org/10.1109/55.669738|
|Abstract:||Micro-Raman spectroscopy is used to monitor titanium silicide (TiSi 2) formation on narrow undoped polycrystalline silicon lines. Line widths varying from 1.0 μm down to 0.35 μm, with silicidation by rapid thermal anneal (RTA) temperature ranging between 780 °C and 1020 °C were analyzed. Phase changes between C49 and C54-Tisi 2 phases were clearly observed. Results demonstrate that analysis of the C54-TiSi 2 Raman peak intensity allowed fast and nondestructive estimation of the process window for low resistivity C54-TiSi 2 formation. Comparison with sheet resistivity measurements showed that micro-Reman scattering provides a complimentary means to electrical analysis for the study of Tisi 2 formation.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 13, 2018
WEB OF SCIENCETM
checked on Nov 5, 2018
checked on Oct 5, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.