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https://scholarbank.nus.edu.sg/handle/10635/80680
Title: | Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines | Authors: | Chua, H.N. Pey, K.L. Siah, S.Y. Lim, E.H. Ho, C.S. |
Issue Date: | 1999 | Citation: | Chua, H.N.,Pey, K.L.,Siah, S.Y.,Lim, E.H.,Ho, C.S. (1999). Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines. Materials Research Society Symposium - Proceedings 564 : 91-99. ScholarBank@NUS Repository. | Abstract: | We report the first observation of voids in sub-quarter micron Ti-salicided BF 2-doped polycrystalline silicon (polySi) lines. Some of the voids, with sizes ranging from 10 to 100 nm, can be clearly seen on the surface of the TiSi 2 film whereas others are situated below the TiSi 2 surface. The void density and size increase with decreasing polySi line-width, especially for line-widths < 0.24 μm. The voiding phenomenon was also observed to be more severe for TiSi 2 fabricated with enhanced salicidation techniques such as pre-amorphizationimplant (PAI) and implant-through-metal (ITM) as compared to the conventional salicidation method without amorphization. The origin of the voids is found to coincide with the fluorine peak at the TiSi 2/polySi interface in the SIMS depth-concentration profiles. © 1999 Materials Research Society. | Source Title: | Materials Research Society Symposium - Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/80680 | ISSN: | 02729172 |
Appears in Collections: | Staff Publications |
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