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| Title: | Interfacial polarization in Al-Y2O3-SiO2-Si capacitor | Authors: | Ling, C.H. | Issue Date: | 1-Jan-1993 | Citation: | Ling, C.H. (1993-01-01). Interfacial polarization in Al-Y2O3-SiO2-Si capacitor. Electronics Letters 29 (19) : 1676-1678. ScholarBank@NUS Repository. | Abstract: | The variation by a factor of 2 in the observed permittivity of yttrium oxide film is explained in terms of interfacial polarization based on the Y2O3/SiO2 double-layer model. Provided the dielectric relaxation time constants of the two layers are grossly dissimilar, the model can also explain the frequency independence of the composite capacitor. | Source Title: | Electronics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/80621 | ISSN: | 00135194 |
| Appears in Collections: | Staff Publications |
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