Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80621
Title: Interfacial polarization in Al-Y2O3-SiO2-Si capacitor
Authors: Ling, C.H. 
Issue Date: 1-Jan-1993
Citation: Ling, C.H. (1993-01-01). Interfacial polarization in Al-Y2O3-SiO2-Si capacitor. Electronics Letters 29 (19) : 1676-1678. ScholarBank@NUS Repository.
Abstract: The variation by a factor of 2 in the observed permittivity of yttrium oxide film is explained in terms of interfacial polarization based on the Y2O3/SiO2 double-layer model. Provided the dielectric relaxation time constants of the two layers are grossly dissimilar, the model can also explain the frequency independence of the composite capacitor.
Source Title: Electronics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80621
ISSN: 00135194
Appears in Collections:Staff Publications

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