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|Title:||Infra-red, X-ray photoelectron spectroscopy and electrical studies of r.f. sputtered amorphous silicon carbide films|
|Keywords:||Amorphous silicon carbide|
X-ray photoelectron spectroscopy
|Citation:||Han, L.J.,Ong, T.Y.,Prakash, S.,Chua, L.G.,Choi, W.K.,Tan, L.S.,Loh, F.C.,Tan, K.L. (1999). Infra-red, X-ray photoelectron spectroscopy and electrical studies of r.f. sputtered amorphous silicon carbide films. Thin Solid Films 343-344 (1-2) : 441-444. ScholarBank@NUS Repository.|
|Abstract:||The effects of furnace and rapid thermal annealing (RTA) on the electrical and structural properties of r.f. sputtered amorphous silicon carbide films were investigated. It was found that RTA has a similar effect on the structural properties of our films as compared with furnace annealing. The conductance results showed that the effect of annealing on the interface trapped charge density (Dit) for the unhydrogenated films can be explained using the conclusion obtained from the infra-red (IR) and X-ray photoelectron spectroscopy (XPS) results. © 1999 Elsevier Science S.A. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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