Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.122277
Title: Improved Mg-doped GaN films grown over a multilayered buffer
Authors: Zhang, X. 
Chua, S.-J. 
Li, P.
Chong, K.-B. 
Wang, W.
Issue Date: 1998
Citation: Zhang, X., Chua, S.-J., Li, P., Chong, K.-B., Wang, W. (1998). Improved Mg-doped GaN films grown over a multilayered buffer. Applied Physics Letters 73 (13) : 1772-1774. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122277
Abstract: Mg-doped p-GaN films have been grown on sapphire substrate with a multilayered buffer (MLB) by metalorganic chemical vapor deposition and characterized by photoluminescence spectroscopy. The MLB consists of GaN/AlxGa1-xN(0
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80575
ISSN: 00036951
DOI: 10.1063/1.122277
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