Improved Mg-doped GaN films grown over a multilayered buffer
Zhang, X. Chua, S.-J. Li, P. Chong, K.-B. Wang, W.
Li, P.
Wang, W.
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Abstract
Mg-doped p-GaN films have been grown on sapphire substrate with a multilayered buffer (MLB) by metalorganic chemical vapor deposition and characterized by photoluminescence spectroscopy. The MLB consists of GaN/AlxGa1-xN(0
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Source Title
Applied Physics Letters
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Date
1998
DOI
10.1063/1.122277
Type
Article