Please use this identifier to cite or link to this item:
|Title:||Improved Mg-doped GaN films grown over a multilayered buffer|
|Authors:||Zhang, X. |
|Citation:||Zhang, X., Chua, S.-J., Li, P., Chong, K.-B., Wang, W. (1998). Improved Mg-doped GaN films grown over a multilayered buffer. Applied Physics Letters 73 (13) : 1772-1774. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122277|
|Abstract:||Mg-doped p-GaN films have been grown on sapphire substrate with a multilayered buffer (MLB) by metalorganic chemical vapor deposition and characterized by photoluminescence spectroscopy. The MLB consists of GaN/AlxGa1-xN(0|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 20, 2019
WEB OF SCIENCETM
checked on Mar 11, 2019
checked on Mar 2, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.