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|Title:||Improved Mg-doped GaN films grown over a multilayered buffer||Authors:||Zhang, X.
|Issue Date:||1998||Citation:||Zhang, X., Chua, S.-J., Li, P., Chong, K.-B., Wang, W. (1998). Improved Mg-doped GaN films grown over a multilayered buffer. Applied Physics Letters 73 (13) : 1772-1774. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122277||Abstract:||Mg-doped p-GaN films have been grown on sapphire substrate with a multilayered buffer (MLB) by metalorganic chemical vapor deposition and characterized by photoluminescence spectroscopy. The MLB consists of GaN/AlxGa1-xN(0||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80575||ISSN:||00036951||DOI:||10.1063/1.122277|
|Appears in Collections:||Staff Publications|
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