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https://doi.org/10.1002/(SICI)1098-2760(20000305)24:53.0.CO;2-F
| Title: | Improved Chalmers model for a GaAs MESFET | Authors: | Xiao, Q. Ooi, B.L. Ma, J. |
Issue Date: | 5-Mar-2000 | Citation: | Xiao, Q.,Ooi, B.L.,Ma, J. (2000-03-05). Improved Chalmers model for a GaAs MESFET. Microwave and Optical Technology Letters 24 (5) : 311-316. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1098-2760(20000305)24:53.0.CO;2-F | Abstract: | An improved Chalmers large-signal model for a GaAs MESFET transistor is proposed. A commercially packaged high-power MESFET transistor (Fujitsu FLC103WG) is adopted for the extraction. Both hot and cold condition measurements and a pulsed I/V measurement are performed to derive the model. For the verification of the model, a simple single-stage class-AB amplifier is subsequently built. The simulation and measurement results of the intermodulation distortion of this amplifier agree excellently. | Source Title: | Microwave and Optical Technology Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/80568 | ISSN: | 08952477 | DOI: | 10.1002/(SICI)1098-2760(20000305)24:53.0.CO;2-F |
| Appears in Collections: | Staff Publications |
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