Please use this identifier to cite or link to this item: https://doi.org/10.1007/BF00305003
Title: Impact ionizing electroluminescence of a double barrier structure
Authors: Sheng, H. 
Chua, S.-J. 
Issue Date: Nov-1994
Citation: Sheng, H., Chua, S.-J. (1994-11). Impact ionizing electroluminescence of a double barrier structure. Optical and Quantum Electronics 26 (11) : 1033-1040. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00305003
Abstract: The impact ionizing electroluminescence model of a unipolar double barrier structure has been developed. The electron density in the quantum well and the hole density generated in the collector region are based on electron current. The electroluminescence results from direct radiative recombination between the electrons and holes in the quantum well. The results show that a light on-off ratio of the electroluminescence can be obtained. © 1994 Chapman & Hall.
Source Title: Optical and Quantum Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/80561
ISSN: 03068919
DOI: 10.1007/BF00305003
Appears in Collections:Staff Publications

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