Please use this identifier to cite or link to this item:
Title: First-principles calculations of GaAs1-xPx-Al0.3Ga0.7As(001) band offsets
Authors: Zhang, X.H.
Chua, S.J. 
Xu, S.J. 
Fan, W.J.
Issue Date: 26-Jan-1998
Source: Zhang, X.H.,Chua, S.J.,Xu, S.J.,Fan, W.J. (1998-01-26). First-principles calculations of GaAs1-xPx-Al0.3Ga0.7As(001) band offsets. Journal of Physics Condensed Matter 10 (3) : 577-580. ScholarBank@NUS Repository.
Abstract: The GaAs1-xPx-Al0.3Ga0.7As(001) band offsets are calculated for both the GaAs and (Al0.3Ga0.7)-(As1-xPx) interface bonds within first-principles local density functional theory. It is found that the band offsets are independent of the type of interfacial bond, while the valence band offset, VBO, decreases linearly with x as VBO = 0.143 - 0.153x eV and the inferred conduction band offset CBO (the band-gap difference minus the valence band offset) decreases linearly as CBO = 0.236 - 0.590x eV for 0.0 ≤ x ≤ 0.20.
Source Title: Journal of Physics Condensed Matter
ISSN: 09538984
DOI: 3/010
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Mar 10, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.