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|Title:||Electronic and optical properties of carbon nitride thin films synthesized by laser ablation under ion beam bombardment|
|Authors:||Lu, Y.F. |
|Citation:||Lu, Y.F.,Ren, Z.M.,Song, W.D.,Chan, D.S.H. (1998-08-15). Electronic and optical properties of carbon nitride thin films synthesized by laser ablation under ion beam bombardment. Journal of Applied Physics 84 (4) : 2133-2137. ScholarBank@NUS Repository.|
|Abstract:||Carbon nitride thin films were deposited by 532 nm Nd:YAG laser ablation of graphite assisted by a nitrogen ion beam bombardment on silicon substrates. Different nitrogen ion beam energies (200, 400, and 600 eV) were used while the laser parameters remained fixed. X-ray photoelectron spectroscopy (XPS) and ellipsometry measurements were carried out to analyze the electronic and optical properties. The XPS C 1s spectrum for the C-N binding is at 286.5 eV while the N 1s spectrum has a corresponding peak of C-N binding at 396.9 eV. The optical gap Eopt is on the order of magnitude of 10-1 eV and increases with the N/C ratio in the deposited film. Linear dependence of the refractive index n and the extinction coefficient k on photon energy E in the range of 1.5-3.5 eV are established. © 1998 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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