Please use this identifier to cite or link to this item:
|Title:||Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum wells|
|Citation:||Li, G., Babinski, A., Chua, S.J., Jagadish, C. (1998). Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum wells. Applied Physics Letters 72 (18) : 2322-2324. ScholarBank@NUS Repository. https://doi.org/10.1063/1.121349|
|Abstract:||In Si δ-modulation-doped GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum well structures (QWs), the electrons from the ionized Si donors are initially confined in the V-shaped potential well (V-PW) formed at the position of a Si δ-doped layer. The efficiency of electrons transferring from the V-PW to the QW was investigated as a function of Si δ-doping concentration in the symmetric GaAs/In0.2Ga0.8As/GaAs QW at 1.7 K. The electron density in the QW increases linearly with an increase of Si δ-doping concentration, while the electron transfer efficiency remains unchanged either in the dark or under the illumination. The asymmetric GaAs/In0.2Ga0.8As/Al0.2Ga0.8As QW has a relatively higher electron transfer efficiency. The effect of grading the Al mole fraction over the AlxGa1-xAs spacer layer on the electron transfer efficiency was also reported. © 1998 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 22, 2018
WEB OF SCIENCETM
checked on Jul 4, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.