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|Title:||Electrical properties of rapid thermal oxides on Si1-x-yGexCy films|
|Authors:||Bera, L.K. |
|Citation:||Bera, L.K.,Choi, W.K.,Feng, W.,Yang, C.Y.,Mi, J. (2000-07-10). Electrical properties of rapid thermal oxides on Si1-x-yGexCy films. Applied Physics Letters 77 (2) : 256-258. ScholarBank@NUS Repository.|
|Abstract:||The electrical characteristics of rapid thermal oxides on Si1-x-yGexCy layers are reported. X-ray photoelectron spectroscopy results indicate segregation of Ge at the SiO2/Si1-x-yGexCy interface, a thin GeO2 layer at the oxide surface, and elemental Ge at the interface and in the oxide. The interface state density of the samples ranges from 3.0×1011 to 3.6×1012 eV-1 cm-2. All the samples show electron trapping behavior and the trap generation rate decreases with increasing C concentration. The charge-to-breakdown value and the oxide breakdown field are higher for Si0.887Ge0.113 than for Si1-x-yGexCy samples, and these values decrease with increasing C concentration. © 2000 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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