Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80386
Title: Electrical and structural properties of rapid thermal annealed amorphous silicon carbide films
Authors: Choi, W.K. 
Ong, T.Y.
Han, L.J.
Loh, F.C. 
Tan, K.L. 
Issue Date: 1998
Source: Choi, W.K.,Ong, T.Y.,Han, L.J.,Loh, F.C.,Tan, K.L. (1998). Electrical and structural properties of rapid thermal annealed amorphous silicon carbide films. Physica Status Solidi (A) Applied Research 169 (1) : 67-76. ScholarBank@NUS Repository.
Abstract: The effect of rapid thermal annealing (RTA) on radio frequency (rf) sputtered amorphous silicon carbide films prepared under different hydrogen partial pressures (PH) was examined. The structural study showed that the effect of RTA on the film properties was similar to that of furnace annealing. Therefore, the mechanisms suggested for furnace annealing could equally be applied to the RTA case. The electrical results showed that the effects of RTA and furnace annealing on interface trapped charge density (Dit) for the unhydrogenated films can be explained satisfactorily using the conclusions obtained from the structural study. For the hydrogenated films, the influence of annealing on Dit warrants further investigation.
Source Title: Physica Status Solidi (A) Applied Research
URI: http://scholarbank.nus.edu.sg/handle/10635/80386
ISSN: 00318965
Appears in Collections:Staff Publications

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