Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1101(00)00114-3
Title: Effects of high current conduction in sub-micron Ti-silicided films
Authors: Gan, C.L.
Pey, K.L. 
Chim, W.K. 
Siah, S.Y.
Issue Date: 1-Oct-2000
Citation: Gan, C.L., Pey, K.L., Chim, W.K., Siah, S.Y. (2000-10-01). Effects of high current conduction in sub-micron Ti-silicided films. Solid-State Electronics 44 (10) : 1837-1845. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(00)00114-3
Abstract: Modeling and characterization of high current conduction in sub-micron titanium disilicide (TiSi2) films formed on n+/p+ silicon and n+/p+ polysilicon over active or field oxide under DC stress are reported. High current conduction in TiSi2 films is shown to be strongly affected by the fabrication technology and process conditions. A model has been developed to explain the self-heating effect of silicide films under high DC stress. A parameter B is used to describe the sensitivity of the films to high current conduction. We found that the parameter B is linearly related to the initial resistance of the film, the temperature coefficient of resistance of TiSi2 and the thermal impedance of the surrounding structures, and the results agree well with the experimental data.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/80373
ISSN: 00381101
DOI: 10.1016/S0038-1101(00)00114-3
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