Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80342
Title: Correlation between charge pumping method and direct-current current voltage method in p-type metal-oxide-semiconductor field-effect transistors
Authors: Jie, B.-B.
Ng, K.-H.
Li, M.-F. 
Lo, K.-F.
Keywords: Charge pumping
DCIV
Interface trap
Oxide charge
pMOSFET
Issue Date: 15-Aug-1999
Source: Jie, B.-B.,Ng, K.-H.,Li, M.-F.,Lo, K.-F. (1999-08-15). Correlation between charge pumping method and direct-current current voltage method in p-type metal-oxide-semiconductor field-effect transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38 (8 B) : 4696-4698. ScholarBank@NUS Repository.
Abstract: In this study, the correlation between the charge pumping (CP) method and the direct-current current voltage (DCIV) method in p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) is investigated. We found that the two techniques probe essentially the same interface traps in the channel (C) region as well as in the drain (D) region. A good linear relationship is observed between the DCIV signal and the CP signal. One obvious advantage of the DCIV methòd is that it can clearly and directly distinguish the interface traps in the C region and in the D region, respectively. This is possible in the CP method only after complicated manipulation of raw experimental data. The shift of Vcp shows the net effect of compensating oxide charge and interface trapped charge, while the shift of Vgb.max mainly shows the effect of the oxide charge. © 1999 Publication Board, Japanese Journal of Applied Physics.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/80342
ISSN: 00214922
Appears in Collections:Staff Publications

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