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https://doi.org/10.1109/16.644662
| Title: | Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's | Authors: | Ling, C.H. | Issue Date: | 1997 | Citation: | Ling, C.H. (1997). Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's. IEEE Transactions on Electron Devices 44 (12) : 2309-2311. ScholarBank@NUS Repository. https://doi.org/10.1109/16.644662 | Abstract: | A linear relation exists between the maximum forward gated-diode current Id and the corresponding maximum charge pumping current Icp in a hot-carrier stressed pMOSFET. Id peak is further observed to shift by an amount equal to the shift in the rising edge of Icp. A close correspondence between the two currents is demonstrated. © 1997 IEEE. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/80326 | ISSN: | 00189383 | DOI: | 10.1109/16.644662 |
| Appears in Collections: | Staff Publications |
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