Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.644662
Title: Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's
Authors: Ling, C.H. 
Issue Date: 1997
Citation: Ling, C.H. (1997). Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's. IEEE Transactions on Electron Devices 44 (12) : 2309-2311. ScholarBank@NUS Repository. https://doi.org/10.1109/16.644662
Abstract: A linear relation exists between the maximum forward gated-diode current Id and the corresponding maximum charge pumping current Icp in a hot-carrier stressed pMOSFET. Id peak is further observed to shift by an amount equal to the shift in the rising edge of Icp. A close correspondence between the two currents is demonstrated. © 1997 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/80326
ISSN: 00189383
DOI: 10.1109/16.644662
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