Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.737470
Title: A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K
Authors: Ling, C.H. 
See, L.K.
Keywords: Impact ionization rate
Low temperature
Mosfet's
Nonstationary effects
Issue Date: 1999
Source: Ling, C.H., See, L.K. (1999). A Modified Lucky Electron Model for Impact lonization Rate in NMOSFET's at 77 K. IEEE Transactions on Electron Devices 46 (1) : 263-266. ScholarBank@NUS Repository. https://doi.org/10.1109/16.737470
Abstract: The nonstationary effects of electrons at 77 K, in the highfield saturation region of the MOSFET, are modeled by incorporating an appropriate electron temperature decrease (-ATe) to the carrier energy, within the framework of a modified lucky electron model. For a thin oxide MOSFET (Tox = 5 nm, Lg = 0.5 μm), ATe is a function of the electric field in the saturation region, and increases rapidly with drain bias. However, for a thick oxide MOSFET (Tox = 12.5 nm, Lg = 5 μm), ATe = 280 K is found to adequately describe the impact ionization rate. Our model also explains the crossover of the ionization rates in the thick oxide MOSFET at 77 K and 300 K. © 1999 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/80275
ISSN: 00189383
DOI: 10.1109/16.737470
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