P-TYPE SEMICONDUCTOR SENSITIZED SOLAR CELLS

Abstract

SENSITIZATION OF P-TYPE NIO WITH SEMICONDUCTOR SENSITIZERS SUCH AS CDSE IS THE TARGET OF THIS RESEARCH. IN THIS RESEARCH, ATTEMPTS TO FABRICATION OF P-NIO-SSC, PERFORMANCE IMPROVEMENT ARE TARGETED AND PROMISING IPCE WAS ACHIEVED. WITH A POLYSULFIDE REDOX ELECTROLYTE, CDX (X=S AND SE)-SENSITIZED P-NIO SOLAR CELLS ARE UNAMBIGUOUSLY DEMONSTRATED WHEN NIO BLOCKING LAYERS ARE USED. TO DECREASE THE RECOMBINATION RATE, CDS BARRIER LAYER WAS DEPOSITED BETWEEN NIO AND CDSE SENSITIZER WHICH RESULTS IN MUCH ENHANCED CELL PERFORMANCE. FRONT/REAR IPCE MEASUREMENTS INDICATE THAT CHARGE COLLECTION IN THIS SYSTEM IS LIMITED BY A SHORT HOLE DIFFUSION LENGTH. FURTHERMORE, IT WAS OBSERVED THAT THE SURFACE ENGINEERING ENHANCED THE PERFORMANCE AND IPCE OF SOLAR CELL. SPECIFICALLY, EXISTENCE OF ZNSE LAYER RESULTED IN TWO FOLD IPCE ENHANCEMENT IN THE CASE OF ZNSE/CDS-NIO. IN ADDITION, DATA REVEALED THAT THE LESS LATTICE MISMATCH BETWEEN THE SENSITIZER AND BARRIER LAYER GIVES RISE TO A MUCH ENHANCED PERFORMAN