Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/77440

Title:	Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction
Authors:	Toh, S.L. Li, K. Ang, C.H. Rao, R. Er, E. Loh, K.P. Boothroyd, C.B. Chan, L.
Issue Date:	2005
Citation:	Toh, S.L.,Li, K.,Ang, C.H.,Rao, R.,Er, E.,Loh, K.P.,Boothroyd, C.B.,Chan, L. (2005). Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 302-305. ScholarBank@NUS Repository.
Abstract:	We have used both convergent beam electron diffraction (CBED) and high-resolution X-ray diffractometry (HRXRD) to investigate the influence of different graded layer thicknesses on the overall and interfacial strain phenomena in the SiGe/Si heterostructures. Broadening of the higher order Laue zone (HOLZ) reflections is often observed at the interface, and contains information relating to the lattice behaviour. These results, when considered and correlated with the plots from HRXRD, allow us to predict the optimized relaxation mechanisms taking place at the interfacial regions. © 2005 IEEE.
Source Title:	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI:	http://scholarbank.nus.edu.sg/handle/10635/77440
Appears in Collections:	Staff Publications

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