Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.006302ssl
Title: Trap levels in graphene oxide: A thermally stimulated current study
Authors: Kajen, R.S.
Chandrasekhar, N.
Pey, K.L.
Vijila, C.
Jaiswal, M. 
Saravanan, S.
Ng, A.M.H.
Wong, C.P.
Loh, K.P. 
Issue Date: 2013
Citation: Kajen, R.S., Chandrasekhar, N., Pey, K.L., Vijila, C., Jaiswal, M., Saravanan, S., Ng, A.M.H., Wong, C.P., Loh, K.P. (2013). Trap levels in graphene oxide: A thermally stimulated current study. ECS Solid State Letters 2 (2) : M17-M19. ScholarBank@NUS Repository. https://doi.org/10.1149/2.006302ssl
Abstract: We report thermally stimulated current (TSC) experiments on graphene oxide (GO) to study the effects of various defect levels near the GO Fermi level. The TSC peaks are ascribed to detrapping from defect levels to the GO hopping transport energy level, and are found to be in agreement with the GO density of states reported in the literature. This work will be useful in evaluating the use of GO in memory/dielectric/barrier applications. © 2012 The Electrochemical Society.
Source Title: ECS Solid State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/77312
ISSN: 21628742
DOI: 10.1149/2.006302ssl
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