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|Title:||Tight-binding recursion calculations of step energetics on the GaAs(110) surface|
|Authors:||Chuan Kang, H. |
|Citation:||Chuan Kang, H.,Chen, X.F.,Tan, H.S. (1997-10-15). Tight-binding recursion calculations of step energetics on the GaAs(110) surface. Journal of Chemical Physics 107 (15) : 5914-5917. ScholarBank@NUS Repository.|
|Abstract:||On the GaAs(110) surface steps perpendicular to the  direction may be either arsenic-terminated or gallium-terminated. We compute the energy difference between these steps using a tight-binding recursion method. We find that the arsenic-terminated step is more stable by approximately 0.5 eV. Our results suggest that some recent experimental observations on the shape of islands formed during homoepitaxy on GaAs(110) may be the consequence of an energy-driven rathar than a kinetics-driven epitaxial growth. © 1997 American Institute of Physics.|
|Source Title:||Journal of Chemical Physics|
|Appears in Collections:||Staff Publications|
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