Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/77291
Title: Tight-binding recursion calculations of step energetics on the GaAs(110) surface
Authors: Chuan Kang, H. 
Chen, X.F.
Tan, H.S.
Issue Date: 15-Oct-1997
Source: Chuan Kang, H.,Chen, X.F.,Tan, H.S. (1997-10-15). Tight-binding recursion calculations of step energetics on the GaAs(110) surface. Journal of Chemical Physics 107 (15) : 5914-5917. ScholarBank@NUS Repository.
Abstract: On the GaAs(110) surface steps perpendicular to the [001] direction may be either arsenic-terminated or gallium-terminated. We compute the energy difference between these steps using a tight-binding recursion method. We find that the arsenic-terminated step is more stable by approximately 0.5 eV. Our results suggest that some recent experimental observations on the shape of islands formed during homoepitaxy on GaAs(110) may be the consequence of an energy-driven rathar than a kinetics-driven epitaxial growth. © 1997 American Institute of Physics.
Source Title: Journal of Chemical Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/77291
ISSN: 00219606
Appears in Collections:Staff Publications

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