Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.susc.2004.11.002
Title: High resolution electron energy loss spectroscopy study of clean, air-exposed and methanol-dosed Ge(1 0 0) surface
Authors: Lim, C.W.
Soon, J.M.
Ma, N.L.
Chen, W. 
Loh, K.P. 
Keywords: Electron energy loss spectroscopy
Germanium
Semiconductor surfaces
Vibrations of adsorbed molecules
Issue Date: 20-Jan-2005
Citation: Lim, C.W., Soon, J.M., Ma, N.L., Chen, W., Loh, K.P. (2005-01-20). High resolution electron energy loss spectroscopy study of clean, air-exposed and methanol-dosed Ge(1 0 0) surface. Surface Science 575 (1-2) : 51-59. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2004.11.002
Abstract: Using high resolution electron energy loss spectroscopy (HREELS), we have characterized the fingerprint spectra of clean, hydrogenated, methanol-dosed and air-exposed n-doped Ge(1 0 0). On clean Ge(1 0 0) 2 × 1, we report the observation of a surface phonon peak between ∼28-35 meV. The position and shape of this peak is sensitive to the presence of low surface coverage of hydrogen and oxygen. By adsorbing molecular hydrogen on the n-doped Ge, this peak shifts towards the elastic peak, and becomes attenuated. The HREELS fingerprint spectrum of air-exposed Ge is similar to that created by dosing Ge with methanol. Methanol undergoes dissociation into methyl radicals and hydroxyl species on Ge surfaces at room temperature and oxidizes the Ge surface readily. © 2004 Elsevier B.V. All rights reserved.
Source Title: Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/76292
ISSN: 00396028
DOI: 10.1016/j.susc.2004.11.002
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