Please use this identifier to cite or link to this item: https://doi.org/10.1002/1521-3773(20000804)39:15<2740
Title: Evidence for dangling bond mediated dimerization of furan on the silicon (111)-(7 x 7) surface
Authors: Cao, Y.
Wang, Z.
Deng, J.-F.
Xu, G.Q. 
Keywords: C-C coupling
Dimerizations furan
Silicon
Surface chemistry
Issue Date: 4-Aug-2000
Citation: Cao, Y.,Wang, Z.,Deng, J.-F.,Xu, G.Q. (2000-08-04). Evidence for dangling bond mediated dimerization of furan on the silicon (111)-(7 x 7) surface. Angewandte Chemie - International Edition 39 (15) : 2740-2743. ScholarBank@NUS Repository. https://doi.org/10.1002/1521-3773(20000804)39:15<2740
Abstract: The covalent attachment of molecular species to the silicon surface by an organic radical based C-C bond formation reaction has been demonstrated with the dimerization of adsorbed furan on Si(111)-(7 x 7). This facile reaction is attributed to the recombination of pairs of adjacent mono-σ complexes at low temperature (see the reaction scheme).
Source Title: Angewandte Chemie - International Edition
URI: http://scholarbank.nus.edu.sg/handle/10635/76140
ISSN: 14337851
DOI: 10.1002/1521-3773(20000804)39:15<2740
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