Please use this identifier to cite or link to this item:
|Title:||Electronic properties of graphene-single crystal diamond heterostructures|
Thoung Nguyen, T.
|Citation:||Zhao, F., Thoung Nguyen, T., Golsharifi, M., Amakubo, S., Loh, K.P., Jackman, R.B. (2013-08-07). Electronic properties of graphene-single crystal diamond heterostructures. Journal of Applied Physics 114 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4816092|
|Abstract:||Single crystal diamond has been used as a substrate to support single layer graphene grown by chemical vapor deposition methods. It is possible to chemically functionalise the diamond surface, and in the present case H-, F-, O-, and N-group have been purposefully added prior to graphene deposition. The electronic properties of the resultant heterostructures vary strongly; a p-type layer with good mobility and a band gap of ∼0.7 eV is created when H-terminated diamond layers are used, whilst a layer with more metallic-like character (high carrier density and low carrier mobility) arises when N(O)-terminations are introduced. Since it is relatively easy to pattern these functional groups on the diamond surface, this suggests that this approach may offer an exciting route to 2D device structures on single layer graphene sheets. © 2013 AIP Publishing LLC.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 15, 2018
WEB OF SCIENCETM
checked on May 23, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.