Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4816092
Title: Electronic properties of graphene-single crystal diamond heterostructures
Authors: Zhao, F.
Thoung Nguyen, T.
Golsharifi, M.
Amakubo, S.
Loh, K.P. 
Jackman, R.B.
Issue Date: 7-Aug-2013
Citation: Zhao, F., Thoung Nguyen, T., Golsharifi, M., Amakubo, S., Loh, K.P., Jackman, R.B. (2013-08-07). Electronic properties of graphene-single crystal diamond heterostructures. Journal of Applied Physics 114 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4816092
Abstract: Single crystal diamond has been used as a substrate to support single layer graphene grown by chemical vapor deposition methods. It is possible to chemically functionalise the diamond surface, and in the present case H-, F-, O-, and N-group have been purposefully added prior to graphene deposition. The electronic properties of the resultant heterostructures vary strongly; a p-type layer with good mobility and a band gap of ∼0.7 eV is created when H-terminated diamond layers are used, whilst a layer with more metallic-like character (high carrier density and low carrier mobility) arises when N(O)-terminations are introduced. Since it is relatively easy to pattern these functional groups on the diamond surface, this suggests that this approach may offer an exciting route to 2D device structures on single layer graphene sheets. © 2013 AIP Publishing LLC.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/76064
ISSN: 00218979
DOI: 10.1063/1.4816092
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

5
checked on Oct 15, 2018

WEB OF SCIENCETM
Citations

5
checked on Oct 15, 2018

Page view(s)

38
checked on Aug 17, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.