Please use this identifier to cite or link to this item: https://doi.org/10.1039/c3ra23473h
Title: Effects of contact treatments on solution-processed n-type dicyano-ovalenediimide and its complementary circuits
Authors: Chang, J.
Li, J.
Chang, K.L.
Zhang, J.
Wu, J. 
Issue Date: 21-Jun-2013
Citation: Chang, J., Li, J., Chang, K.L., Zhang, J., Wu, J. (2013-06-21). Effects of contact treatments on solution-processed n-type dicyano-ovalenediimide and its complementary circuits. RSC Advances 3 (23) : 8721-8727. ScholarBank@NUS Repository. https://doi.org/10.1039/c3ra23473h
Abstract: The device performance of bottom-contact organic field-effect transistors (OFETs) was limited by contact resistance which originates from a non-optimal semiconductor growth morphology and limited charge injection area. Self-assembled monolayer (SAM) treatment has proved to be an effective approach to optimize thin film growth and align the energy levels. This SAM-induced work-function modification has different effects on the charge injection barrier as well as on the device performance in terms of threshold voltage. These results were analysed in detail from the perspectives of surface morphology and energy alignment at the Au-semiconductor interface in n-type ovalenediimide (ODI-CN)-based OFETs. Finally, complementary inverters were built using pentacene (p-type) and ODI-CN (n-type) OFETs, and these showed a voltage gain of 13. © The Royal Society of Chemistry 2013.
Source Title: RSC Advances
URI: http://scholarbank.nus.edu.sg/handle/10635/76031
ISSN: 20462069
DOI: 10.1039/c3ra23473h
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