Please use this identifier to cite or link to this item: https://doi.org/10.1039/c2cc17543f
Title: Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals
Authors: Wang, L.
Lian, J.
Cui, P.
Xu, Y.
Seo, S.
Lee, J.
Chan, Y. 
Lee, H.
Issue Date: 28-Apr-2012
Citation: Wang, L., Lian, J., Cui, P., Xu, Y., Seo, S., Lee, J., Chan, Y., Lee, H. (2012-04-28). Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals. Chemical Communications 48 (34) : 4052-4054. ScholarBank@NUS Repository. https://doi.org/10.1039/c2cc17543f
Abstract: Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors. © 2012 The Royal Society of Chemistry.
Source Title: Chemical Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/75988
ISSN: 13597345
DOI: 10.1039/c2cc17543f
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

10
checked on Sep 19, 2018

WEB OF SCIENCETM
Citations

9
checked on Sep 10, 2018

Page view(s)

28
checked on Jun 22, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.