Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals

Please use this identifier to cite or link to this item: https://doi.org/10.1039/c2cc17543f

Title:	Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals
Authors:	Wang, L. Lian, J. Cui, P. Xu, Y. Seo, S. Lee, J. Chan, Y. Lee, H.
Issue Date:	28-Apr-2012
Citation:	Wang, L., Lian, J., Cui, P., Xu, Y., Seo, S., Lee, J., Chan, Y., Lee, H. (2012-04-28). Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals. Chemical Communications 48 (34) : 4052-4054. ScholarBank@NUS Repository. https://doi.org/10.1039/c2cc17543f
Abstract:	Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors. © 2012 The Royal Society of Chemistry.
Source Title:	Chemical Communications
URI:	http://scholarbank.nus.edu.sg/handle/10635/75988
ISSN:	13597345
DOI:	10.1039/c2cc17543f
Appears in Collections:	Staff Publications

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