Cycloaddition chemistry of thiophene on the silicon (111)-7×7 surface

Abstract

Cycloaddition reactions of the heterocyclic thiophene molecule on silicon surface was studied. The binding configuration, thermal stability and absorption sites of thiophene molecules on silicon were obtained using a combination of thermal desorption spectroscopy (TDS), high resolution electron energy loss spectroscopy (HREELS), electron energy loss spectroscopy (EELS), scanning tunneling microscopy (STM) and semiempirical calculations. Covalent binding of thiophene molecules onto the silicon surface was readily achieved by vacuum vapor adsorption. Preferential chemisorption of thiophene molecules on the faulted subunits and the center adatoms was also observed.