Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1386435
Title: Cycloaddition chemistry of thiophene on the silicon (111)-7×7 surface
Authors: Cao, Y.
Yong, K.S.
Wang, Z.H.
Deng, J.F.
Lai, Y.H. 
Xu, G.Q. 
Issue Date: 15-Aug-2001
Citation: Cao, Y., Yong, K.S., Wang, Z.H., Deng, J.F., Lai, Y.H., Xu, G.Q. (2001-08-15). Cycloaddition chemistry of thiophene on the silicon (111)-7×7 surface. Journal of Chemical Physics 115 (7) : 3287-3296. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1386435
Abstract: Cycloaddition reactions of the heterocyclic thiophene molecule on silicon surface was studied. The binding configuration, thermal stability and absorption sites of thiophene molecules on silicon were obtained using a combination of thermal desorption spectroscopy (TDS), high resolution electron energy loss spectroscopy (HREELS), electron energy loss spectroscopy (EELS), scanning tunneling microscopy (STM) and semiempirical calculations. Covalent binding of thiophene molecules onto the silicon surface was readily achieved by vacuum vapor adsorption. Preferential chemisorption of thiophene molecules on the faulted subunits and the center adatoms was also observed.
Source Title: Journal of Chemical Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/75846
ISSN: 00219606
DOI: 10.1063/1.1386435
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