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|Title:||Band-bending at the graphene-sic interfaces: Effect of the substrate|
|Authors:||Chen, W. |
|Citation:||Chen, W., Chen, S., Ni, Z.H., Huang, H., Qi, D.C., Gao, X.Y., Shen, Z.X., Wee, A.T.S. (2010). Band-bending at the graphene-sic interfaces: Effect of the substrate. Japanese Journal of Applied Physics 49 (1 Part 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.49.01AH05|
|Abstract:||In-situ synchrotron-based photoemission spectroscopy, low-temperature scanning tunneling microscopy and Raman spectroscopy are used to investigate the interface properties of graphene on both the (0001) and (0001) 6H-SiC (Si- and C-terminated surfaces). We clearly observe the upward band-bending upon the formation of interfacial graphene, which depends on the surface polarity of the underlying SiC substrate, i.e., a weak upward band bending by 0.4 eV forms on the Si-terminated 6H-SiC(0001); while a much larger upward band bending by 1.3eV appears on the C-terminated 6H-SiC(0001). © 2010 The Japan Society of Applied Physics.|
|Source Title:||Japanese Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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