Please use this identifier to cite or link to this item:
|Title:||Band-bending at the graphene-sic interfaces: Effect of the substrate|
|Authors:||Chen, W. |
|Citation:||Chen, W., Chen, S., Ni, Z.H., Huang, H., Qi, D.C., Gao, X.Y., Shen, Z.X., Wee, A.T.S. (2010). Band-bending at the graphene-sic interfaces: Effect of the substrate. Japanese Journal of Applied Physics 49 (1 Part 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.49.01AH05|
|Abstract:||In-situ synchrotron-based photoemission spectroscopy, low-temperature scanning tunneling microscopy and Raman spectroscopy are used to investigate the interface properties of graphene on both the (0001) and (0001) 6H-SiC (Si- and C-terminated surfaces). We clearly observe the upward band-bending upon the formation of interfacial graphene, which depends on the surface polarity of the underlying SiC substrate, i.e., a weak upward band bending by 0.4 eV forms on the Si-terminated 6H-SiC(0001); while a much larger upward band bending by 1.3eV appears on the C-terminated 6H-SiC(0001). © 2010 The Japan Society of Applied Physics.|
|Source Title:||Japanese Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 12, 2018
WEB OF SCIENCETM
checked on Oct 3, 2018
checked on Oct 13, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.